Bestellungen über
$5000NAND256W3A2BN6E
This product is housed in a PDSO48 package and features a TSOP-48 interface for easy integration into electronic devices
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marken: Micron Technology Inc.
Herstellerteil #: NAND256W3A2BN6E
Datenblatt: NAND256W3A2BN6E Datenblatt (PDF)
Paket/Gehäuse: 48-TFSOP
Produktart: Speicher
RoHS-Status:
Lagerzustand: 6.469 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
NAND256W3A2BN6E Allgemeine Beschreibung
Featuring advanced technology and efficient design, the NAND256W3A2BN6E stands out as a versatile solution for storage needs in a wide range of consumer electronics. Its high-density configuration enables manufacturers to create devices with ample storage space without compromising on performance. The NAND flash memory family is well-known for its durability, fast read and write speeds, and energy-efficient operation, making it a preferred choice for developers seeking reliable non-volatile storage solutions. The NAND256W3A2BN6E chip embodies these characteristics, offering a seamless integration into devices that require efficient storage capabilities
Funktionen
- HIGH DENSITY NAND FLASH MEMORIES
- – Up to 1 Gbit memory array
- – Up to 32 Mbit spare area
- – Cost effective solutions for mass storage applications
- NAND INTERFACE
- – x8 or x16 bus width
- – Multiplexed Address/ Data
- – Pinout compatibility for all densities
- SUPPLY VOLTAGE
- – 1.8V device: VDD = 1.7 to 1.95V
- – 3.0V device: VDD = 2.7 to 3.6V
- PAGE SIZE
- – x8 device: (512 + 16 spare) Bytes
- – x16 device: (256 + 8 spare) Words
- BLOCK SIZE
- – x8 device: (16K + 512 spare) Bytes
- – x16 device: (8K + 256 spare) Words
- PAGE READ / PROGRAM
- – Random access: 12µs (max)
- – Sequential access: 50ns (min)
- – Page program time: 200µs (typ)
- COPY BACK PROGRAM MODE
- – Fast page copy without external buffering
- FAST BLOCK ERASE
- – Block erase time: 2ms (Typ)
- STATUS REGISTER
- ELECTRONIC SIGNATURE
- CHIP ENABLE ‘DON’T CARE’ OPTION
- – Simple interface with microcontroller
- SERIAL NUMBER OPTION
- HARDWARE DATA PROTECTION
- – Program/Erase locked during Power transitions
- DATA INTEGRITY
- – 100,000 Program/Erase cycles
- – 10 years Data Retention
- RoHS COMPLIANCE
- – Lead-Free Components are Compliant with the RoHS Directive
- DEVELOPMENT TOOLS
- – Error Correction Code software and hardware models
- – Bad Blocks Management and Wear Leveling algorithms
- – File System OS Native reference software
- – Hardware simulation models
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Package | Tray | Product Status | Obsolete |
Programmabe | Not Verified | Memory Type | Non-Volatile |
Memory Format | FLASH | Technology | FLASH - NAND |
Memory Size | 256Mbit | Memory Organization | 32M x 8 |
Memory Interface | Parallel | Write Cycle Time - Word, Page | 50ns |
Access Time | 50 ns | Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 48-TFSOP (0.724", 18.40mm Width) | Supplier Device Package | 48-TSOP |
Base Product Number | NAND256 |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
![]() |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
![]() |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
![]() |
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
![]() |
Paypal | 4,0 % Servicegebühr wird berechnet. |
![]() |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
![]() |
Western Union | charge US.00 banking fee. |
![]() |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
-
Schritt1 :Produkt
-
Schritt2 :Vakuumverpackung
-
Schritt3 :Antistatikbeutel
-
Schritt4 :Individuelle Verpackung
-
Schritt5 :Verpackungskartons
-
Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
-
The NAND256W3A2BN6E is a 256-gigabit (32GB) NAND Flash memory chip manufactured by Samsung. It features a 3-bit per cell design, offering high capacity storage in a small form factor. This chip is commonly used in solid-state drives (SSDs), smartphones, tablets, and other electronic devices requiring fast and reliable data storage.
-
Equivalent
The equivalent products of NAND256W3A2BN6E chip are MT29F2G08ABAEAWP, K9F2G08U0C-SCB0, S34ML02G100TFI000, SM2762A1BCME010, and IS36xML2G2G1LCG. -
Features
NAND256W3A2BN6E is a NAND flash memory chip with a capacity of 256GB. It has a 3.3V power supply, asynchronous page read and program operation, and an operating temperature range of -40°C to 85°C. This chip also features a 2KB page size, 6ns program time, and built-in ECC correction. -
Pinout
The NAND256W3A2BN6E is a 256Mbit NAND Flash memory chip with 48-pin WSON package. It has a 3V operating voltage and offers high-speed data transfer. The pin functions include power supply, ground, data input/output, and control signals for memory operations. -
Manufacturer
The manufacturer of NAND256W3A2BN6E is Micron Technology Inc. It is an American multinational corporation that specializes in computer memory and data storage technologies. Micron is one of the largest semiconductor companies in the world and is a leading manufacturer of NAND flash memory products. -
Application Field
The NAND256W3A2BN6E is commonly used in various applications such as solid-state drives (SSDs), digital cameras, music players, USB flash drives, and other consumer electronics devices that require high performance, reliability, and high storage capacity in a small form factor. -
Package
The NAND256W3A2BN6E chip has a BGA (Ball Grid Array) package type, with 48 ball contacts. It is a NAND Flash memory chip with a 256Gb (32GB) density, organized as 512M x 8bits. The dimensions of the chip are 10.0mm x 13.5mm with a thickness of 1.0mm.
Wir bieten qualitativ hochwertige Produkte, durchdachten Service und eine Kundendienstgarantie
-
Wir haben reichhaltige Produkte, die Ihre unterschiedlichen Bedürfnisse erfüllen können.
-
Die Mindestbestellmenge beginnt bei 1 Stück.
-
Niedrigste internationale Versandgebühr beginnt ab 0,00 USD
-
365 Tage Qualitätsgarantie für alle Produkte