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TO-263-7
(insgesamt 147 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| TLE5206-2G | Compact design for space-saving application | Infineon | 3.901 | BOM |
| OPA547F | Ideal for Precise Voltage Applications | Texas Instruments | 6.792 | BOM |
| DPA424R | The DPA424R is a compact, high-performance isolated DC/DC converter designed for SMD applications, with a wide input voltage range of 36-75V DC | Power Integrations | 8.184 | BOM |
| TLE5205-2G | Robust and reliable H-bridge motor driver in a compact 8-pin package (7+Tab) D2PAK T/R design | Infineon | 3.505 | BOM |
| TLE4242G | LED Drivers tailored for 42V LED Lighting | Infineon | 3.500 | BOM |
| IPB017N10N5LFATMA1 | Surface Mount N-Channel MOSFET TO263-7 IPB017 Series 100V 180A 313W | Infineon | 9.458 | BOM |
| DRV101F | Advanced valve controller for precise flow rate management and pressure regulatio | texas instruments | 5.613 | BOM |
| BTS6510B | Reliable current limiting switch IC for consistent performance | Infineon Technologies Corporation | 3.593 | BOM |
| BTS621L1E3128A | 7 Pin Plastic SIP | Infineon Technologies Corporation | 2.636 | BOM |
| BTN7971B | Half Bridge Motor Driver for Automotive Applications | Infineon Technologies Corporation | 3.432 | BOM |
| LT1210CR | Bipolar Operational Amplifier | Analog Devices, Inc | 3.433 | BOM |
| IPB015N08N5ATMA1 | TO-263 Packaged N-channel 80V 180A Power MOSFET Supplied on Tape and Reel | Infineon | 9.458 | BOM |
| BTS660P | Power Switch/Driver 1:1 N-Channel 38A P-TO220-7-3 | Infineon Technologies Corporation | 2.801 | BOM |
| C2M1000170J | Silicon carbide MOSFET with a 1700V voltage rating and a low on-resistance of 1 Ohm | Wolfspeed | 7.439 | BOM |
| OPA548F | Single AMP Operational Amplifier 7 Pin Plastic SIP | Texas Instruments | 5.381 | BOM |
| OPA551FA | High-Voltage Op Amp | Texas Instruments | 7.918 | BOM |
| IRFS4010-7PPBF | Ultra-low RDS(on) N-channel MOSFET for efficient energy transfer | Infineon | 9.458 | BOM |
| BTS50015-1TAA | High current power switch integrated circuits - PROFET technology | infineon | 6.041 | BOM |
| 64-2096PBF | N-Channel Power MOSFET in D2PAK Package | Infineon Technologies | 8.655 | BOM |
| LM2673S-ADJ/NOPB | Compact and versatile LM2673S-ADJ/NOPB DC-DC converter with a DDPAK package, providing reliable performance for a range of voltage conversion needs | Texas Instruments | 9.286 | BOM |
| FDB0105N407L | N-Channel 40 V 460A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount TO-263-7 | onsemi | 9.458 | BOM |
| FDB1D7N10CL7 | 00v 268a shielded gate powertrench mosfet n-channel 7-pin d2pak | Onsemi | 9.458 | BOM |
| FDB0630N1507L | N-Channel 150 V 130A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount TO-263-7 | onsemi | 9.458 | BOM |
| IPB180P04P4L02ATMA1 | Trans MOSFET P-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R | Infineon | 9.458 | BOM |
| BTS640S2GATMA1 | Advanced Power Distribution for Low-Voltage Application | Infineon | 9.458 | BOM |
| C3M0032120J1 | Advanced technology for high-performance power electronics applications | Wolfspeed | 9.458 | BOM |
| C3M0040120J1 | ROHS-compliant MOSFET with 1.2kV voltage rating, 64A current rating, and 272W power dissipation | Wolfspeed | 8.559 | BOM |
| C3M0045065J1 | Efficient energy conversion for demanding industrial systems | Wolfspeed | 6.295 | BOM |
| G3R350MT12J | TO-263-7 G3R SiC MOSFET, 1200V 350m | GeneSiC Semiconductor | 9.458 | BOM |
| SQM200N04-1M1L_GE3 | N-Channel 40V 200A Surface Mount Transistor | Vishay | 6.134 | BOM |
| G3R160MT12J | Item Name: G3R160MT12J, Details: High voltage rating of 1 | GeneSiC Semiconductor | 9.458 | BOM |
| G2R1000MT17J | Unipolar SiC transistor with V blocking voltag | GeneSiC Semiconductor | 9.458 | BOM |
| C3M0350120J | Transistors utilizing silicon carbide | Wolfspeed | 9.015 | BOM |
| G3R160MT17J | N-channel metal-oxide semiconductor FET with low RDS(o | GeneSiC Semiconductor | 9.458 | BOM |
| IMBF170R650M1 | Power Field-Effect Transistor | infineon | 9.132 | BOM |
| IMBF170R1K0M1 | Power Field-Effect Transistor | infineon | 8.395 | BOM |
| C3M0280090J | 900V G3 SiC MOSFET with a resistance of 280 mOhm | Wolfspeed | 9.351 | BOM |
| C3M0065090J | High-performance MOSFET utilizing SiC, capable of handling 900 volts with a resistance of 65 milliohms | Wolfspeed, Inc. | 9.685 | BOM |
| C3M0120090J | Compliance: ROHS | Cree Inc. | 8.177 | BOM |
| LM2599S-ADJ | Bipolar power supply integration | Texas Instruments | 8.552 | BOM |
| LMH6321TS | Buffer amplifier in PSSO7 package with one function | Texas Instruments | 5.783 | BOM |
| IRFS4115-7PPBF | TO-263CB package housing a robust Metal-oxide Semiconductor FET suitable for demanding environments | Infineon | 9.458 | BOM |
| IRFS7437-7PPBF | Power Field-Effect Transistor with 195A I(D) and N-Channel | Infineon | 9.458 | BOM |
| BTS7930B | High current solution | Infineon | 9.458 | BOM |
| AUIRFS4010-7P | AUIRFS4010-7P is a high-current automotive MOSFET with a low on-resistance of 4 mOhm at 100V | Infineon Technologies | 7.030 | BOM |
| AUIRLS3036-7P | With its high voltage rating of V and massive current capacity, this N-CH MOSFET is ideal for demanding automotive and industrial circuit | Infineon | 9.458 | BOM |
| IMBF170R450M1 | Ideal for Automation, Control, and Monitoring Syste | Infineon Technologies Corporation | 3.807 | BOM |
| LM2586S-ADJ | It has a wide input voltage range of 1.23V to 60V, making it versatile for various applications | Texas Instruments | 5.401 | BOM |
| BTN8980TA | INFINEON HALF BRIDGE | INFINEON TECHNOLOGIES AG | 8.656 | BOM |
| IMBG120R030M1H | High-speed switching transistor ideal for DC-to-DC converters and motor control application | Infineon Technologies AG | 5.816 | BOM |
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