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$5000IXGH50N60B
The IXGH50N60B is designed for high-power applications requiring efficient switching at high voltages
Marken: Ixys
Herstellerteil #: IXGH50N60B
Datenblatt: IXGH50N60B Datenblatt (PDF)
Paket/Gehäuse: TO-247AD-3
Produktart: Single IGBTs
RoHS-Status:
Lagerzustand: 8.889 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXGH50N60B Allgemeine Beschreibung
Engineered for industrial use, the IXGH50N60B IGBT boasts a voltage rating of 600V and a current rating of 75A, making it well-suited for high power switching applications. Its low VCE(sat) voltage of 2.3V at 50A leads to reduced power losses and improved efficiency, enhancing its appeal for demanding industrial scenarios. Housed in a TO-247 package, this IGBT delivers excellent thermal performance and high power dissipation capabilities, enabling reliable operation even at elevated temperatures. With a high short circuit withstand time of 10µs, the IXGH50N60B is perfectly suited for applications where short circuit protection is paramount. Its positive temperature coefficient simplifies the paralleling of multiple devices, while its wide safe operating area increases reliability and ruggedness. Widely used in motor control, power supplies, and high power inverters, the IXGH50N60B demonstrates its versatility and dependability in industrial settings
Funktionen
- High efficiency and reliability
- Faster switching and lower losses
- Improved thermal performance guaranteed
- Low power consumption for energy savings
- Safe operation within specified ratings
- Precise control of voltage and current
Anwendung
- Advanced motor drives
- High-speed RF generators
- Compact electric chargers
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247AD-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | IXGH50N60 | Brand | IXYS |
Continuous Collector Current Ic Max | 75 A | Height | 21.46 mm |
Length | 16.26 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Width | 5.3 mm |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
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Verpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The IXGH50N60B is a high power IGBT (Insulated Gate Bipolar Transistor) chip that is designed for use in high voltage and high current applications. It offers low conduction and switching losses, making it ideal for applications such as motor control, power supplies, and inverters. Its impressive performance and reliability make it a popular choice among engineers in the power electronics industry.
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Equivalent
Equivalent products of IXGH50N60B chip are as follows: 1. IGBTs from other manufacturers such as Infineon, STMicroelectronics, and Toshiba that have similar specifications and performance characteristics. 2. Alternative IXYS IGBTs like IXGH25N120B, IXGH60N60B, and IXGH40N60B that may suit your application requirements. 3. Silicon carbide (SiC) MOSFETs or GaN transistors as potential replacements with improved efficiency and switching speeds. -
Features
IXGH50N60B is a high voltage IGBT transistor featuring a collector current of 75A, a collector-emitter voltage of 600V, and a maximum power dissipation of 330W. It offers low saturation voltage and high-speed switching performance, making it suitable for use in high power and high-frequency applications. -
Pinout
The IXGH50N60B is a high power IGBT with a TO-247 package. It has 3 pins: gate (G), collector (C), and emitter (E). The gate pin is used to control the switching of the IGBT, while the collector and emitter pins are used to carry the main current flow. -
Manufacturer
The manufacturer of the IXGH50N60B is IXYS Corporation. IXYS Corporation is a global semiconductor company that designs and produces power metal-oxide-semiconductor field-effect transistors (MOSFETs), rectifiers, thyristors, and other power semiconductor devices for a wide range of applications in the power conversion and control market. -
Application Field
The IXGH50N60B is commonly used in power switching applications such as motor drives, UPS systems, induction heating, and industrial control systems. It is also used in high voltage DC-DC converters, inverters, and automotive systems requiring higher power density and efficiency. -
Package
The IXGH50N60B chip comes in a TO-247 package, which is a through-hole form. The size of the chip is approximately 15.65mm x 19.5mm x 5.74mm.
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