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TO-3PN-3
(insgesamt 96 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| FQA28N50 | Trans MOSFET N-CH with a voltage rating of 500V and a current rating of 28.4A in a TO-3P(N) package | Onsemi | 9.458 | BOM |
| 2SK2917 | TO-247VAR N-Channel MOSFET Transistor | Toshiba | 9.458 | BOM |
| FQA28N50F | Compact power device for small form factor system | Onsemi | 3.447 | BOM |
| GT40Q321 | Suitable for industrial power supplies, motor drives, and mor | Toshiba | 7.839 | BOM |
| FQA24N50 | N-Channel 500 V 24A (Tc) 290W (Tc) Through Hole TO-3P | Onsemi | 9.255 | BOM |
| FDA38N30 | Power MOSFET, N-Channel, UniFETTM, 300V, 38A, 85mΩ, TO-3P | Onsemi | 2.177 | BOM |
| FQA8N100C | Configuration: Unipolar | Onsemi | 3.138 | BOM |
| FQA24N60 | CH 600V 23.5A 3-Pin(3+Tab) TO-3P(N) Rail | Onsemi | 9.458 | BOM |
| FQA140N10 | Transistor MOSFET with N-type channel, capable of handling up to 100 volts and 140 amps, packaged in TO-3P(N) format | Onsemi | 2.556 | BOM |
| FQA38N30 | N-Channel 300 V 38.4A (Tc) 290W (Tc) Through Hole TO-3P | Onsemi | 9.458 | BOM |
| IRFS450B | N-Channel B-FET MOSFET 500V | Onsemi | 9.458 | BOM |
| 2SK2613 | TRANSISTOR 8 A, 1000 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, 3 PIN, FET General Purpose Power | Toshiba | 9.458 | BOM |
| IRFP460C | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN Rail | onsemi | 9.458 | BOM |
| FQA85N06 | Power dissipation of 214W under typical operating conditions | Onsemi | 50 | BOM |
| FDA20N50 | Product FDA20N50: TO-3PN MOSFETs compliant with ROHS standards | onsemi | 9.458 | BOM |
| FDA18N50 | N-Channel 500 V 19A (Tc) 239W (Tc) Through Hole TO-3PN | onsemi | 9.458 | BOM |
| GT20J101 | Channel IGBT Insulated Gate BIP Transistor | Toshiba | 7.611 | BOM |
| FQA90N15 | 3P 150V 90A N-Channel Power MOSFET QFET | Onsemi | 5.412 | BOM |
| FQA55N25 | Designed for high-frequency switching and low-loss performance in DC-DC converter | Onsemi | 6.902 | BOM |
| FQA11N90C | Advanced Q-FET MOSFET with 900V voltage rating | Onsemi | 5.583 | BOM |
| FQA70N15 | Low on-resistance of 28mΩ in TO-3P package | Onsemi | 9.458 | BOM |
| FQA65N20 | Specifications: 32mΩ@10V, 32.5A, 310W | Onsemi | 6.119 | BOM |
| 2SK2968 | MOSFET transistor with N-channel design | Toshiba | 5.129 | BOM |
| GT30J121 | The GT30J121 device is an enhancement-type N-channel IGBT engineered to handle voltages up to 600V and currents of 30A, housed in TO3PN packaging | Toshiba | 8.847 | BOM |
| GT20J301 | Advanced Power Semiconductor Solutions for Motor Control, Power Supplies, and Renewable Energy System | Toshiba | 9.395 | BOM |
| FQA6N90C | Silicon carbide semiconductor | Onsemi | 9.458 | BOM |
| FQA62N25C | N-Channel 250 V 62A (Tc) 298W (Tc) Through Hole TO-3PN | onsemi | 9.458 | BOM |
| FQA11N90 | High-Power N-Channel MOSFET Transistor | Onsemi | 5.577 | BOM |
| IRFP350A | Reliable N-Channel Power MOSFET for high-voltage, low-resistance application | Onsemi | 9.458 | BOM |
| FDA59N30 | A 300V 59A N-channel MOSFET with TO-3P pin configuration | Onsemi | 9.458 | BOM |
| FDA28N50F | Tube-packaged N-channel 500V 28A MOSFET | Onsemi | 6.354 | BOM |
| FDA28N50 | MOSFET UniFET 500V | onsemi | 9.458 | BOM |
| FDA24N40F | Robust and efficient power management component for industrial use | Onsemi | 9.356 | BOM |
| FDA032N08 | N-Channel 75 V 120A (Tc) 375W (Tc) Through Hole TO-3PN | onsemi | 9.458 | BOM |
| TK15J60U | TK15J60U: N-channel Si power MOSFET, 15A, 600V, 0.3 ohm, TO-3P(N) package | toshiba | 5.240 | BOM |
| SSH10N60B | 10A Continuous Drain Current | FAIRCHILD SEMICONDUCTOR CORP | 9.348 | BOM |
| SSH25N40A | Power Field-Effect Transistor, 25A Drain Current, 400V Voltage Rating, 0.2ohm On-Resistance, N-Channel | onsemi | 8.423 | BOM |
| SSS6N70A | N-Channel power MOSFET | onsemi | 7.812 | BOM |
| SFH9154 | Ideal for high-voltage switching and linear applications requiring low voltage dro | ONSEMI | 9.940 | BOM |
| IRFP140A | Compact High-Power Switch, IRFP140A 100V N-Channel MOSFET for Applications | onsemi | 9.654 | BOM |
| IRFS350A | The IRFS350A MOSFET, designed in a TO-3PF package, boasts a power dissipation of 92W and exhibits a voltage drop of 4V at a leakage current of 250uA | ROCHESTER ELECTRONICS LLC | 8.827 | BOM |
| FQA9N90C | N-channel 900V 9A MOSFET in TO-3PN package for rail applications | Onsemi | 2.750 | BOM |
| FQA13N50 | TO-3P package design for efficient heat dissipation | onsemi | 7.779 | BOM |
| FQA7N80 | 800V MOSFET with 7.2A current rating | onsemi | 5.274 | BOM |
| FQA10N80C | N-channel MOSFET featuring 800 volts and advanced QFET design | onsemi | 5.976 | BOM |
| FQA34N20 | N-Channel QFET MOSFET 200V | onsemi | 9.458 | BOM |
| FQA16N50 | Product description: MOSFET 500V N-Channel QFET | onsemi | 9.535 | BOM |
| FQAF11N90 | Effortless Power Control for High-Voltage Applications | onsemi | 5.029 | BOM |
| FQA9N90 | MOSFET 900V N-Channel QFET | Fairchild Semiconductor | 6.470 | BOM |
| 2SK2313(F) | Low-voltage, high-current MOSFET suitable for automotive applicatio | toshiba | 9.790 | BOM |
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