Bestellungen über
$5000ON FDMS0312AS
N-Channel 30 V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount 8-PQFN (5x6)
Marken: ON Semiconductor, LLC
Herstellerteil #: FDMS0312AS
Datenblatt: FDMS0312AS Datasheet (PDF)
Paket/Gehäuse: QFN-8
Produktart: Single FETs, MOSFETs
RoHS-Status:
Lagerzustand: 3.365 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FDMS0312AS Allgemeine Beschreibung
The FDMS0312AS stands out in power conversion applications with its cutting-edge design aimed at minimizing energy losses. By integrating the latest advancements in silicon and packaging technologies, this device delivers the lowest on-resistance (RDS(on)) alongside superior switching performance. Its innovative features make it a top choice for applications requiring high efficiency and reliability. Additionally, the FDMS0312AS boasts an efficient monolithic Schottky body diode, further enhancing its overall performance
Funktionen
- Ergonomic Design for Enhanced User Experience
- Advanced Cooling System for Improved Performance
- Safe and Reliable Operation Guarantee
- User-Friendly Interface for Easy Navigation
Anwendung
- Clothing
- Shoes
- Accessories
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Source Content uid | FDMS0312AS | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | Manufacturer Package Code | 483AE |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 44 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 33 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 18 A | Drain-source On Resistance-Max | 0.005 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-240AA |
JESD-30 Code | R-PDSO-F5 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 36 W | Pulsed Drain Current-Max (IDM) | 100 A |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | FLAT | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | TMOS |
feature-configuration | Single Quad Drain Triple Source | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 30 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 3 | feature-maximum-continuous-drain-current-a | 18 |
feature-maximum-drain-source-resistance-mohm | 5@10V | feature-typical-gate-charge-vgs-nc | 23@10V|[email protected] |
feature-typical-gate-charge-10v-nc | 23 | feature-typical-input-capacitance-vds-pf | 1365 |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 2500 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 8 | feature-supplier-package | PQFN EP |
feature-standard-package-name1 | QFN | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Schritt1 :Produkt
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Schritt2 :Vakuumverpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt5 :Verpackungskartons
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FDMS0312AS chip is a power MOSFET designed for high-power applications. It offers low on-resistance and high efficiency, making it suitable for various applications such as power supplies and motor control. With its compact size and robust performance, the FDMS0312AS chip is an excellent choice for power management in electronic devices.
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Equivalent
The equivalent products of the FDMS0312AS chip are the FDMS0312S, FDMS0312SC, and FDMS0312SG. -
Features
FDMS0312AS is a 30V N-channel PowerTrench MOSFET. It offers a low on-resistance, allowing for high efficiency and reduced power losses. It has a compact 3x3mm power QFN package, making it suitable for space-constrained applications. It also has a high current-handling capability, making it ideal for power management in various electronic devices. -
Pinout
The FDMS0312AS is a dual N-channel PowerTrench FDmeshTM MOSFET with a 12-pin count. It is designed for power management applications, offering efficient switching and low on-resistance. The specific functions of each pin can be found in the datasheet provided by the manufacturer. -
Manufacturer
The FDMS0312AS is manufactured by Fairchild Semiconductor. It is a global company that specializes in the design, development, and manufacturing of power management technologies for various industries, including automotive, consumer electronics, industrial, and mobile devices. -
Application Field
The FDMS0312AS is a power MOSFET that can be used in a variety of applications including power management, DC-DC converters, motor control, and battery protection circuits. It is suitable for applications that require high efficiency, low power dissipation, and compact size. -
Package
The FDMS0312AS chip has a MOSFET package type known as Power 56, a form factor described as Surface Mount, and a physical size of 5.2mm x 6.5mm.
Datenblatt PDF
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