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Bestellungen über
$5000
ON FQD2N100TM
Transistor MOSFET, N-channel type, designed for operation at 1 kilovolt with a current rating of 1
Marken: ON
Herstellerteil #: FQD2N100TM
Datenblatt: FQD2N100TM Datenblatt (PDF)
Paket/Gehäuse: TO-252
RoHS-Status:
Lagerzustand: 6.043 Stück, Neues Original
Produktart: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Alle Preise sind in USD
| Menge | Einzelpreis | Ext. Preis |
|---|---|---|
| 1 | $0,785 | $0,785 |
| 10 | $0,656 | $6,560 |
| 30 | $0,593 | $17,790 |
| 100 | $0,529 | $52,900 |
| 500 | $0,423 | $211,500 |
| 1000 | $0,404 | $404,000 |
Auf Lager: 6.043 Stck
FQD2N100TM Allgemeine Beschreibung
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Funktionen
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DPAK-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds Breakdown Voltage: 1 kV
Continuous Drain Current: 1.6 A
Rds On - Drain-Source On-Resistance: 7.1 Ohms
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 15.5 nC
Minimum Operating Temperature: -55°C
Maximum Operating Temperature: +150°C
Pd - Power Dissipation: 2.5 W
Fall Time: 35 ns
Forward Transconductance - Min: 1.9 S
Rise Time: 30 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 13 ns
Anwendung
- Lighting
Spezifikationen
| Parameter | Wert | Parameter | Wert |
|---|---|---|---|
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | DPAK-3 / TO-252-3 |
| Case Outline | 369AS | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 2500 | ON Target | N |
| Channel Polarity | N-Channel | Configuration | Single |
| V(BR)DSS Min (V) | 1000 | VGS Max (V) | ±30 |
| VGS(th) Max (V) | 5 | ID Max (A) | 1.6 |
| PD Max (W) | 50 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | - | RDS(on) Max @ VGS = 10 V (mΩ) | 9000 |
| Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 12 |
| Ciss Typ (pF) | 400 | Pricing ($/Unit) | $0.4213Sample |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | DMOS | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 1000 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
| feature-maximum-continuous-drain-current-a | 1.6 | feature-maximum-drain-source-resistance-mohm | 9000@10V |
| feature-typical-gate-charge-vgs-nc | 12@10V | feature-typical-gate-charge-10v-nc | 12 |
| feature-typical-input-capacitance-vds-pf | 400@25V | feature-typical-output-capacitance-pf | 40 |
| feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | DPAK | feature-standard-package-name1 | TO-252 |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes | feature-svhc-exceeds-threshold | Yes |
| Series | QFET® | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V | Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 9Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
| Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Versand
| Versandart | Versandgebühr | Vorlaufzeit | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
| Zahlungsbedingungen | Handgebühr | |
|---|---|---|
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
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Paypal | 4,0 % Servicegebühr wird berechnet. |
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Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
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Western Union | charge US.00 banking fee. |
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Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FQD2N100TM chip is a power mosfet designed for high-speed switching applications. it is commonly used in power management circuits and motor control systems. the chip offers low on-resistance, high current capacity, and a compact package for easy integration into electronic designs. it provides efficient and reliable performance, making it suitable for a wide range of applications in various industries.
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Equivalent
Some equivalent products of the FQD2N100TM chip include irf630tm, ntd2n100ctg, and stp7n10tm. these are all n-channel mosfet transistors with similar specifications and performance characteristics. -
Features
The features of FQD2N100TM include low on-resistance, fast switching speed, high power dissipation capability, and a durable, compact package design. -
Pinout
The FQD2N100TM is a mosfet transistor with a to-252 package. it has a pin count of 3, including a drain pin, a source pin, and a gate pin. the drain pin is used to connect to the high side of the load, the source pin connects to the low side of the load, and the gate pin controls the switching operation of the transistor. -
Manufacturer
The manufacturer of the FQD2N100TM is fairchild semiconductor. it is a company that specializes in the design, development, and production of a wide range of semiconductor solutions for various markets including automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The FQD2N100TM is a power mosfet transistor commonly used in applications requiring high power switching, such as motor control, power supplies, and lighting systems. it can also be utilized in audio amplifiers and other industrial applications that require high voltage and current capabilities. -
Package
The FQD2N100TM chip has a to-252 (dpak) package type, a vertical dmos (vdmos) form, and a size of 6.3mm x 6.2mm.
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