Bestellungen über
$5000HGTG11N120CND
1.2kV NPT (Non-Punch Through) IGBTs TO-247AC-3 ROHS 298W 43A
Marken: Onsemi
Herstellerteil #: HGTG11N120CND
Datenblatt: HGTG11N120CND Datenblatt (PDF)
Paket/Gehäuse: TO-247-3
RoHS-Status:
Lagerzustand: 9.458 Stück, Neues Original
Produktart: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Alle Preise sind in USD
Menge | Einzelpreis | Ext. Preis |
---|---|---|
1 | $3,900 | $3,900 |
10 | $3,381 | $33,810 |
30 | $3,073 | $92,190 |
90 | $2,761 | $248,490 |
450 | $2,617 | $1177,650 |
900 | $2,552 | $2296,800 |
Auf Lager: 9.458 Stck
HGTG11N120CND Allgemeine Beschreibung
The HGTG11N120CND is a high power IGBT (Insulated Gate Bipolar Transistor) module designed for use in various applications such as motor control, power supply circuits, and inverters. It features a voltage rating of 1200V and a current rating of 50A, making it suitable for high power and high voltage applications. This IGBT module is a part of the series which uses advanced trench gate field stop technology to provide low on-state voltage and low switching losses, resulting in higher efficiency and better performance. It also has a short-circuit capability and a positive temperature coefficient for safe and reliable operation.The HGTG11N120CND module is designed with a compact and rugged construction that allows for easy mounting and handling. It has a ceramic base plate for improved thermal performance and a high-creepage distance for enhanced electrical isolation. This module also features built-in temperature sensors for monitoring and protection against overheating.
Funktionen
- 1200V IGBT 11A Power Module
- Enhanced co-packaged modules
- Low conduction and switching losses
- High frequency operation
- Integrated gate-driver
- Temperature sensing diode included
- Optimized for motor drive applications
- High reliability and ruggedness
Anwendung
- Industrial motor drives
- Renewable energy systems
- Power supplies
- Electric vehicle charging systems
- Welding equipment
- Battery management systems
- Uninterruptible power supplies (UPS)
- Induction heating systems
- Instrumentation and measurement systems
Spezifikationen
Parameter | Wert | Parameter | Wert |
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Product Category | IGBT Transistors | RoHS | Details |
REACH | Details | Technology | Si |
Package / Case | TO-247-3 | Mounting Style | Through Hole |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 2.1 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
Continuous Collector Current at 25 C | 43 A | Pd - Power Dissipation | 298 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | HGTG11N120CND | Brand | onsemi / Fairchild |
Continuous Collector Current | 55 A | Continuous Collector Current Ic Max | 43 A |
Gate-Emitter Leakage Current | +/- 250 nA | Height | 20.82 mm |
Length | 15.87 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 450 | Subcategory | IGBTs |
Width | 4.82 mm | Part # Aliases | HGTG11N120CND_NL |
Unit Weight | 0.225401 oz |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Schritt1 :Produkt
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Schritt2 :Vakuumverpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt5 :Verpackungskartons
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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HGTG11N120CND is a power MOSFET chip designed for high-voltage applications. It is capable of handling currents up to 11A and voltage ratings up to 1200V, making it suitable for use in power supplies, motor drives, and other industrial applications. The chip features low conduction and switching losses, ensuring high efficiency and reliable performance.
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Equivalent
Equivalent products to the HGTG11N120CND chip include the IRG4BC20KDPBF, STGW45HF60WD, FGA25N120AND, and GT50J325. These chips are also high-speed IGBTs with similar specifications and capabilities. -
Features
HGTG11N120CND is a high voltage IGBT power module. It features a low conduction and switching losses, high blocking voltage, and a compact package design. It also provides low EMI emissions and is suitable for a variety of applications, including motor drives, solar inverters, and welding equipment. -
Pinout
The HGTG11N120CND is a high voltage N-Channel IGBT (Insulated Gate Bipolar Transistor) device. It has a pin count of 3, including the collector/emitter terminals (C/E) and the gate terminal (G). The device is typically used in power electronics applications that require high voltage switching capabilities. -
Manufacturer
Infineon Technologies is the manufacturer of the HGTG11N120CND. It is a German semiconductor manufacturing company specializing in power semiconductors, sensors, and microcontrollers. -
Application Field
The HGTG11N120CND is a high voltage IGBT (Insulated-gate bipolar transistor) primarily used in power electronics applications such as motor control, switching power supplies, and inverters. It is suitable for various industrial and consumer applications that require high reliability and efficiency, offering a compact and robust solution for power conversion. -
Package
The HGTG11N120CND chip is available in TO-247 package type. It has a TO-247-3 form with a size of approximately 10.16mm x 15.24mm.
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