IXKR25N80C

Teilpunkte

• The IXKR25N80C is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring efficient power switching. It operates with a voltage rating of 800V and a current rating of 25A. The chip's features include low VCE(sat), fast switching, and a built-in diode for freewheeling. This makes it suitable for use in industrial motor drives, UPS systems, and power supplies.

• Equivalent

  The IXKR25N80C is a MOSFET transistor. Equivalent products include IRFP4768PBF, FDPF18N50T, and STW9N150. Always check datasheets for specific requirements.

• Features

  The IXKR25N80C is a high-voltage MOSFET transistor with a VDS rating of 800V, a maximum current of 25A, and a low on-state resistance for efficient power handling. It features fast switching characteristics suitable for various power electronic applications.

• Pinout

  The IXKR25N80C is a MOSFET transistor with a TO-247 package. It typically has 3 pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins. It's primarily used in power electronics applications for switching and amplification purposes.

• Manufacturer

  The manufacturer of the IXKR25N80C is IXYS Corporation. It is a semiconductor company that designs and produces power semiconductors, advanced mixed-signal ICs, and digital ICs. It serves a wide range of industries such as automotive, aerospace, and renewable energy.

• Application Field

  The IXKR25N80C can be used in various applications such as switch mode power supplies, hard switching circuits, welding equipment, induction heating, and motor control. It is a high-voltage, high-current rated IGBT (Insulated Gate Bipolar Transistor) that can efficiently handle loads in these applications.

• Package

  The IXKR25N80C chip comes in a TO-247 package, has a discrete form, and its size is approximately 15.87mm x 20.57mm x 4.83mm (0.625" x 0.809" x 0.190").