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ON FDB52N20TM
N-Channel 200 V 52A (Tc) 357W (Tc) Surface Mount TO-263 (D2PAK)
Marken: ON Semiconductor, LLC
Herstellerteil #: FDB52N20TM
Datenblatt: FDB52N20TM Datasheet (PDF)
Paket/Gehäuse: D2PAK
Produktart: Transistoren
RoHS-Status:
Lagerzustand: 2756 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BOMFDB52N20TM Allgemeine Beschreibung
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Funktionen
- RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A
- Low gate charge ( Typ. 49nC)
- Low Crss ( Typ. 66pF)
- 100% avalanche tested
Anwendung
- This product is general usage and suitable for many different applications.
Spezifikationen
| Parameter | Wert | Parameter | Wert |
|---|---|---|---|
| Source Content uid | FDB52N20TM | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | D2PAK-3/2 | Manufacturer Package Code | 418AJ |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 10 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 2520 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 52 A | Drain-source On Resistance-Max | 0.049 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263 |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 357 W |
| Pulsed Drain Current-Max (IDM) | 208 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | UniFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 200 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 52 | |
| feature-maximum-drain-source-resistance-mohm | 49@10V | feature-typical-gate-charge-vgs-nc | 49@10V |
| feature-typical-gate-charge-10v-nc | 49 | feature-typical-input-capacitance-vds-pf | 2230@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 357000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Versand
| Versandart | Versandgebühr | Vorlaufzeit | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
| Zahlungsbedingungen | Handgebühr | |
|---|---|---|
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
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Paypal | 4,0 % Servicegebühr wird berechnet. |
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Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
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Western Union | charge US.00 banking fee. |
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Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FDB52N20TM is a power MOSFET chip designed for various electronic applications. It has a high voltage rating of 200V and a continuous drain current of 52A, making it suitable for power switch devices. The chip features low on-resistance and fast switching capabilities, providing efficient power conversion. Its compact size and durability make it an ideal choice for automotive, industrial, and consumer electronics.
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Equivalent
Some equivalent products of the FDB52N20TM chip are the IRFP250N and the IRFB11N50A. -
Features
The features of FDB52N20TM include N-channel MOSFET technology, a drain-source voltage of 200V, a continuous drain current of 52A, a low on-state resistance of 36mΩ, and a fast switching speed. It is suitable for various applications, including power supplies, motor drives, and inverters. -
Pinout
The FDB52N20TM is a MOSFET transistor with a TO-263 package, consisting of 3 pins. Pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. It is commonly used in power electronic applications due to its high voltage and current handling capabilities. -
Manufacturer
The manufacturer of the FDB52N20TM is Fairchild Semiconductor. It is an American company that specializes in the design, development, and manufacturing of power management solutions. It offers a wide range of products including discrete semiconductors, integrated circuits, and optoelectronics for various industries such as automotive, industrial, and telecommunication. -
Application Field
The FDB52N20TM transistor is commonly used in various applications such as motor control, power supplies, and audio amplifier circuits. Additionally, it is suitable for use in high-speed switching applications due to its low resistance and fast-switching capability. -
Package
The FDB52N20TM chip is available in TO-263 package type. It has a form of a flat, rectangular shape with three leads. The size dimensions of the package are typically around 10mm x 10mm x 2mm.
Datenblatt PDF
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