ON FDS86252
N-Channel 150 V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Marken: ON Semiconductor, LLC
Herstellerteil #: FDS86252
Datenblatt: FDS86252 Datasheet (PDF)
Paket/Gehäuse: SO-8
Produktart: Transistoren
RoHS-Status:
Lagerzustand: 3031 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BOMFDS86252 Allgemeine Beschreibung
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Funktionen
- Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
Anwendung
- Consumer Appliances
- DC-DC Conversion
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SOIC-8 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 150 V | Id - Continuous Drain Current: | 4.5 A |
Rds On - Drain-Source Resistance: | 55 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.4 V | Qg - Gate Charge: | 10.6 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 5 W | Channel Mode: | Enhancement |
Tradename: | PowerTrench | Series: | FDS86252 |
Packaging: | MouseReel | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 2.9 ns |
Forward Transconductance - Min: | 13 S | Height: | 1.75 mm |
Length: | 4.9 mm | Product Type: | MOSFET |
Rise Time: | 1.6 ns | Factory Pack Quantity: | 2500 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 14 ns | Typical Turn-On Delay Time: | 9.2 ns |
Width: | 3.9 mm | Unit Weight: | 0.004586 oz |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | TMOS | feature-configuration | Single Quad Drain Triple Source |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 150 |
feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | |
feature-maximum-continuous-drain-current-a | 4.5 | feature-maximum-drain-source-resistance-mohm | 55@10V |
feature-typical-gate-charge-vgs-nc | 10.6@10V|5.2@5V | feature-typical-gate-charge-10v-nc | 10.6 |
feature-typical-input-capacitance-vds-pf | 718@75V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 8 | |
feature-supplier-package | SOIC | feature-standard-package-name1 | SO |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | No |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
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2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Schritt1 :Produkt
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Schritt2 :Vakuumverpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt5 :Verpackungskartons
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FDS86252 is a chip used for driving N-Channel MOSFETs in various switching applications, such as motor control, power supplies, and lighting systems. It is equipped with a high-speed gate drive to optimize switching characteristics, and it offers low on-resistance and low gate charge. The chip provides protection features like thermal shutdown, overcurrent protection, and UVLO (Undervoltage Lockout), making it suitable for a wide range of applications that require efficient and reliable MOSFET control.
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Equivalent
The FDS86252 chip is a dual N-channel PowerTrench MOSFET. There are several equivalent products available from different manufacturers, including the IRF7313, SiR427DP, and STP9NK60ZFP. These chips have similar specifications and can be used as alternatives in various applications. -
Features
The FDS86252 is a dual N-Channel PowerTrench® MOSFET with a low on-resistance and high current rating. It is capable of efficient switching, making it suitable for use in power management circuits and battery protection systems. It features a compact and surface-mountable SO-8 package for ease of use and integration. -
Pinout
The FDS86252 is a dual N-channel PowerTrench MOSFET with a 6-pin SOT-23 package. Its pins include the source (S), gate (G), and drain (D) for each of the two MOSFETs. It is primarily used for switching applications in power management and load switching circuits. -
Manufacturer
The manufacturer of the FDS86252 is Fairchild Semiconductor Corporation. It is a global company that designs, manufactures, and markets semiconductor devices used in various applications such as automotive, consumer electronics, computing, industrial, and telecommunications. -
Application Field
The FDS86252 is a dual N-channel PowerTrench® MOSFET suitable for a wide range of applications, including power management, battery charging, motor control, and solid-state relays. It offers low on-resistance, fast switching capabilities, and high thermal performance, making it ideal for various high-frequency switching applications in automotive, industrial, and consumer electronics. -
Package
The FDS86252 chip is a surface mount package with an SO-8 (Small Outline) form factor. Its size is 5.00mm x 6.2mm x 1.75mm.
Datenblatt PDF
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