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SuperSO8
(insgesamt 102 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| BSC057N08NS3G | N-Channel Silicon Metal-oxide Semiconductor FET | Infineon | 3.109 | BOM |
| BSC047N08NS3G | 8A current capacity | Infineon | 3.195 | BOM |
| BSC600N25NS3 G | 250V 25A TDSON-8 Package | Infineon | 6.465 | BOM |
| BSC0909NS | 8-pin TDSON EP-packaged N-channel MOSFET capable of handling 34V and 12A | Infineon | 2.481 | BOM |
| BSC0902NS | 8-pin TDSON EP packaged N-channel MOSFET | Infineon | 3.467 | BOM |
| BSC052N03LS | OptiMOS MOSFET, 30V, 57A, N-channel, TDSON-8 package | Infineon | 2.746 | BOM |
| BSC600N25NS3G | 250V 25A TDSON-8 Package | Infineon Technologies Corporation | 2.525 | BOM |
| BSC320N20NS3G | The BSCNSG is designed for demanding power management task | Infineon Technologies Corporation | 3.837 | BOM |
| BSC123N08NS3G | Low on-resistance of 0.0123 ohms | Infineon Technologies Corporation | 3.313 | BOM |
| BSC110N15NS5 | High-voltage N-channel transistor for efficient power control | Infineon | 2.810 | BOM |
| BSC110N06NS3G | TDSON-8 package provides excellent thermal dissipation and reliability | Infineon Technologies Corporation | 2.933 | BOM |
| BSC093N15NS5 | Super compact SOpackage for space-saving desi | Infineon | 5.510 | BOM |
| BSC060N10NS3G | Power transistor with N-channel MOSFET, capable of handling 100V voltage and 14.9A current in 8-pin TDSON EP package for automated assembly | Infineon Technologies Corporation | 3.686 | BOM |
| BSC059N04LSG | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | Infineon Technologies Corporation | 2.943 | BOM |
| BSC059N04LS6 | Compact Pin TDSON Package for space-constrained desig | Infineon Technologies Corporation | 3.789 | BOM |
| BSC030N08NS5 | Advanced MOSFET Technology for Reliable Performan | Infineon | 2.284 | BOM |
| BSC028N06NS | High-power N-channel MOSFET for efficient motor control and power conversion application | Infineon | 2.122 | BOM |
| BSC016N06NS | This 8-pin TDSON package provides high current handling | Infineon | 3.836 | BOM |
| BSC160N15NS5 | High-speed switching N-channel power transisto | Infineon | 9.908 | BOM |
| BSC190N15NS3G | BSC190N15NS3 G Power Switching Device | Infineon | 3.422 | BOM |
| BSC030P03NS3G | Transistor MOSFET P-channel 30V with 25.4A in a 8-pin TDSON EP package on tape and reel | Infineon | 3.862 | BOM |
| BSC014N06NS | N-Channel 60 V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17 | Infineon | 3.958 | BOM |
| BSC021N08NS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3.789 | BOM |
| BSC027N04LSG | N-Channel 40 V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1 | Infineon Technologies Corporation | 2.603 | BOM |
| BSC220N20NSFD | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 3.712 | BOM |
| BSC034N03LSG | High-power N-channel MOSFET for demanding application | Infineon | 3.743 | BOM |
| BSC0901NS | BSC0901NS Power FET: Operating as an N-channel Metal-oxide Semiconductor Field-Effect Transistor | Infineon | 2.000 | BOM |
| BSC082N10LS G | Technical Information: BSC082N10LS G MOSFETs with TDSON-8-EP(5x6) packaging, meeting ROHS standards | Infineon Technologies | 5.116 | BOM |
| BSC017N04NS G | With a 40V voltage tolerance and a 30A current handling capability | Infineon Technologies | 9.261 | BOM |
| BSC340N08NS3G | With a voltage tolerance of up to 80V and a current capacity of 7A | Infineon Technologies Corporation | 2.482 | BOM |
| BSC190N12NS3G | The BSC190N12NS3 G MOSFET features a drain-source resistance of 19 milliohms at a gate-source voltage of 10 volts | Infineon Technologies Corporation | 3.536 | BOM |
| BSC100N06LS3G | N-channel 60V 12A Transistor with TDSON EP 8-Pin Packaging | Infineon Technologies Corporation | 2.341 | BOM |
| BSC096N10LS5 | Low-voltage MOSFETs designed for high-reliability applications" | Infineon Technologies Corporation | 3.533 | BOM |
| BSC093N04LSG | Small signal transistor ideal for amplifying signals | Infineon Technologies Corporation | 2.647 | BOM |
| BSC0805LS | Field-effect transistor with TRENCH technology for high voltage applications | Infineon Technologies Corporation | 3.231 | BOM |
| BSC072N03LDG | Product BSC072N03LD G is a Dual N-Channel Power Mosfet with a low on-state resistance of 7.2 mOhm | Infineon Technologies Corporation | 3.792 | BOM |
| BSC032N04LS | High current, low ohmic resistance N-channel FET | Infineon | 2.977 | BOM |
| BSC025N03MSG | Advanced power management solutions available | Infineon Technologies Corporation | 3.359 | BOM |
| BSC022N04LS6 | Low-loss, high-current MOSFET suitable for automotive and industrial application | Infineon Technologies Corporation | 2.668 | BOM |
| BSC022N03SG | Robust (Ta) and (Tc) rated for reliable operation in extreme temperature | Infineon Technologies Corporation | 2.240 | BOM |
| BSC22DN20NS3 G | OptiMOS 3 MOSFET featuring N-channel architecture, designed to support up to 200 volts and 7 amps, enclosed in a TDSON-8 package | Infineon | 5.328 | BOM |
| ISC0703NLS | Power Field-Effect Transistor, | Infineon Technologies Corporation | 2.141 | BOM |
| ISC060N10NM6 | ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. | Infineon Technologies Corporation | 3.419 | BOM |
| BSC010N04LS6 | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2.706 | BOM |
| BSC014N06NST | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3.725 | BOM |
| BSC019N06NS | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 2.193 | BOM |
| BSC026N04LS | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2.282 | BOM |
| BSC027N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2.802 | BOM |
| BSC027N06LS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3.005 | BOM |
| BSC050N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2.947 | BOM |
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