ON FCPF11N60F
N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3
Marken: ON Semiconductor, LLC
Herstellerteil #: FCPF11N60F
Datenblatt: FCPF11N60F Datasheet (PDF)
Paket/Gehäuse: TO-220F
Produktart: Transistoren
RoHS-Status:
Lagerzustand: 3193 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BOMFCPF11N60F Allgemeine Beschreibung
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Funktionen
- 600 V @ TJ = 150°C
- Typ. RDS(on) = 320 mΩ
- Fast Recovery Type (trr = 120 ns)
- Ultra Low Gate Charge (Typ. Qg = 40 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
- 100% Avalanche Tested
- RoHS compliant
Anwendung
- AC-DC Power Supplies
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 11 A |
Rds On - Drain-Source Resistance: | 380 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 52 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
Tradename: | SuperFET FRFET | Series: | FCPF11N60F |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 56 ns |
Forward Transconductance - Min: | 9.7 S | Height: | 16.07 mm |
Length: | 10.36 mm | Product Type: | MOSFET |
Rise Time: | 98 ns | Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Type: | N-Channel MOSFET | Typical Turn-Off Delay Time: | 119 ns |
Typical Turn-On Delay Time: | 34 ns | Width: | 4.9 mm |
Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
feature-material | feature-process-technology | SuperFET | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 600 | feature-maximum-gate-source-voltage-v | ±30 |
feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 11 |
feature-maximum-drain-source-resistance-mohm | 380@10V | feature-typical-gate-charge-vgs-nc | 40@10V |
feature-typical-gate-charge-10v-nc | 40 | feature-typical-input-capacitance-vds-pf | 1148@25V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 36000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-220FP |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
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Verpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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FCPF11N60F is a MOSFET chip primarily used for power switching applications. It can handle a maximum voltage of 600V and a continuous drain current of 11A. This chip is designed for efficient power conversion and features low on-resistance, high-speed switching capabilities, and low gate charge. It also includes built-in protection features such as over-temperature and short-circuit protection.
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Equivalent
There are currently no direct equivalent products to the FCPF11N60F chip. However, similar alternatives with comparable specifications and performance can be found from other manufacturers, such as Infineon's CoolMOS, Fairchild's SuperFET, or ON Semiconductor's High Voltage Power MOSFETs. -
Features
The FCPF11N60F is a power MOSFET with a drain-source voltage rating of 600V and a current rating of 11A. It features low on-resistance, fast switching speed, and high avalanche energy capability. It is housed in a TO-220F package, making it suitable for various industrial and consumer applications requiring high-performance power switching. -
Pinout
The FCPF11N60F is a power MOSFET with a pin count of 3. The three pins are Gate, Source, and Drain. The Gate pin controls the switching of the MOSFET, while the Source and Drain pins control the flow of current through the device. -
Manufacturer
The manufacturer of the FCPF11N60F is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductors and integrated circuits. -
Application Field
The FCPF11N60F is a high-voltage Power MOSFET suitable for various applications, including power supplies, motor control, DC-DC converters, and inverters. -
Package
The FCPF11N60F chip is available in a TO-220F package type, has a single form, and its size is approximately 10.16mm x 3.81mm x 20.57mm.
Datenblatt PDF
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