ON NTMFS4C022NT1G
N-Channel 30 V 30A (Ta), 136A (Tc) 3.1W (Ta), 64W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Marken: ON Semiconductor, LLC
Herstellerteil #: NTMFS4C022NT1G
Datenblatt: NTMFS4C022NT1G Datasheet (PDF)
Paket/Gehäuse: SO-8FL
RoHS-Status:
Lagerzustand: 2805 Stück, Neues Original
Produktart: Transistoren
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Alle Preise sind in USD
Menge | Einzelpreis | Ext. Preis |
---|---|---|
1 | $0,779 | $0,779 |
10 | $0,647 | $6,470 |
30 | $0,582 | $17,460 |
100 | $0,517 | $51,700 |
500 | $0,446 | $223,000 |
1500 | $0,425 | $637,500 |
In Stock:2805 PCS
NTMFS4C022NT1G Allgemeine Beschreibung
N-Channel 30 V 30A (Ta), 136A (Tc) 3.1W (Ta), 64W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Funktionen
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Anwendung
ONSEMISpezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Source Content uid | NTMFS4C022NT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | SO-8FL, DFN5, 6 PIN | Manufacturer Package Code | 488AA |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 66 Weeks | Date Of Intro | 2016-06-01 |
Samacsys Manufacturer | onsemi | Avalanche Energy Rating (Eas) | 549 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 136 A |
Drain-source On Resistance-Max | 0.0024 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 67 pF | JESD-30 Code | R-PDSO-F5 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 352 A | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | FLAT |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | ||
feature-configuration | Single Quad Drain Triple Source | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 30 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 2.2 | feature-maximum-continuous-drain-current-a | 30 |
feature-maximum-drain-source-resistance-mohm | 1.7@10V | feature-typical-gate-charge-vgs-nc | 45.2@10V|[email protected] |
feature-typical-gate-charge-10v-nc | 45.2 | feature-typical-input-capacitance-vds-pf | 3071@15V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 3100 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 5 | feature-supplier-package | SO-FL EP |
feature-standard-package-name1 | DFN | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Schritt1 :Produkt
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Schritt2 :Vakuumverpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt5 :Verpackungskartons
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The NTMFS4C022NT1G chip is a small-sized high-performance N-Channel Power MOSFET. It is designed to handle high power requirements efficiently and reliably. With low on-resistance and high current carrying capacity, it is suitable for various applications such as power supply circuits, motor control, and LED lighting. The chip is known for its compact size and high performance characteristics.
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Equivalent
Some of the equivalent products to the NTMFS4C022NT1G chip are the DMG2302UV-7, RJK0305DPB, and PSMN0R4-30YLD. These chips are also MOSFETs and provide similar features and specifications to the NTMFS4C022NT1G, making them suitable alternatives. -
Features
NTMFS4C022NT1G is a small-sized dual N-channel power MOSFET with low on-resistance and high current-handling capability. It is designed for use as a power switch in applications with low voltage and high energy efficiency requirements. The package is compatible with automatic placement equipment. -
Pinout
The NTMFS4C022NT1G is a MOSFET transistor with an SMD package. It has a pin count of 8, including the gate, drain, and source pins. The function of this MOSFET is to control the flow of current in electronic circuits, primarily in power management applications such as voltage regulators. -
Manufacturer
ON Semiconductor is the manufacturer of the NTMFS4C022NT1G. It is a semiconductor company that specializes in power and energy efficient solutions. -
Application Field
The NTMFS4C022NT1G is a power MOSFET commonly used in various applications such as switching regulators, motor control, and power management in electronic devices. It offers low ON resistance, high power density, and excellent thermal performance, making it suitable for a wide range of applications that require efficient power switching capabilities. -
Package
The NTMFS4C022NT1G chip has a package type of PowerPAK SO-8, a form of surface mount, and a size of 5mm x 6mm.
Datenblatt PDF
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