vishay SI2308BDS-T1-GE3

Teilpunkte

• The SI2308BDS-T1-GE3 chip is a power MOSFET, which is an electronic component used in power management applications. It is designed to handle high currents and voltage levels efficiently and reliably. The chip is compact and provides low on-resistance and fast switching performance. It is commonly used in various industrial and automotive applications, such as motor controls, power supplies, and inverters.

• Equivalent

  The equivalent products of the SI2308BDS-T1-GE3 chip include Si2308BDS-T1-GE2, SI2308BDS-T1-GE3R, and SI2318DS-T1-GE3.

• Features

  The SI2308BDS-T1-GE3 is a small-signal MOSFET transistor. It has a low on-resistance of 0.08 ohms, suitable for high-frequency switching applications. It has a high current capacity of 3.5A and a voltage rating of 20V. It is designed for low power consumption and efficiency.

• Pinout

  The SI2308BDS-T1-GE3 is a MOSFET transistor. It has 3 pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and the source. It is commonly used in power management applications due to its small size and low on-resistance.

• Manufacturer

  The manufacturer of the SI2308BDS-T1-GE3 is Vishay Siliconix. It is a company that specializes in the design and production of discrete semiconductors and passive electronic components.

• Application Field

  The SI2308BDS-T1-GE3 is a small signal MOSFET transistor that can be used in a variety of applications, including power management, motor control, and general-purpose switching.

• Package

  The SI2308BDS-T1-GE3 chip is packaged in a SOT-23 form factor. The dimensions of a SOT-23 package are typically 2.9 mm x 1.3 mm x 1.0 mm or smaller.