ON FQB5N90TM
N-Channel 900 V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount TO-263 (D2PAK)
Marken: ON Semiconductor, LLC
Herstellerteil #: FQB5N90TM
Datenblatt: FQB5N90TM Datasheet (PDF)
Paket/Gehäuse: TO-263
Produktart: Transistoren
RoHS-Status:
Lagerzustand: 3404 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BOMFQB5N90TM Allgemeine Beschreibung
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Funktionen
- 5.4A, 900V, RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 2.7A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 13pF)
- 100% avalanche tested
- RoHS compliant
Anwendung
- Lighting
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Source Content uid | FQB5N90TM | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | D2PAK-3 | Manufacturer Package Code | 418AJ |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 51 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 660 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (ID) | 5.4 A | Drain-source On Resistance-Max | 2.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 158 W | Pulsed Drain Current-Max (IDM) | 21.6 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | DMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 900 |
feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
feature-maximum-continuous-drain-current-a | 5.4 | feature-maximum-drain-source-resistance-mohm | 2300@10V |
feature-typical-gate-charge-vgs-nc | 31@10V | feature-typical-gate-charge-10v-nc | 31 |
feature-typical-input-capacitance-vds-pf | 1200@25V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 3130 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-supplier-package | D2PAK | feature-standard-package-name1 | TO-263 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Schritt1 :Produkt
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Schritt2 :Vakuumverpackung
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Schritt3 :Antistatikbeutel
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Schritt4 :Individuelle Verpackung
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Schritt5 :Verpackungskartons
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Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FQB5N90TM chip is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It offers a low on-resistance, allowing efficient power handling, and has high reliability and robustness. The chip's advanced features and performance make it suitable for applications such as power supplies, motor control, and audio amplification.
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Features
The FQB5N90TM is a power MOSFET transistor with a drain-source voltage rating of 900V and a continuous drain current of 5A. It has a low gate charge and high switching speed, making it suitable for high-frequency applications. The transistor also has a low on-resistance and low capacitance, enabling efficient power management. -
Pinout
The FQB5N90TM is a MOSFET transistor with 3 pins. The pin-out configuration is Gate (G), Drain (D), and Source (S). The Gate pin is used to control the flow of current between the Drain and Source pins. -
Manufacturer
The manufacturer of the FQB5N90TM is Fairchild Semiconductor. It is a semiconductor company that designs, manufactures, and markets a wide range of power semiconductors, discrete semiconductors, and integrated circuits. -
Application Field
The FQB5N90TM is a power MOSFET transistor commonly used in high-voltage applications such as switch-mode power supplies, motor control, and lighting. Its high voltage rating and low on-state resistance make it suitable for various power conversion and control circuits that require efficient and reliable operation. -
Package
The FQB5N90TM chip is available in a TO-263 package type, commonly known as a D2PAK form. Its dimensions or size fall within the standard specifications for a TO-263 package, measuring approximately 10.28mm x 15.27mm x 4.57mm.
Datenblatt PDF
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